IPW65R110CFDFKSA2
Nomor Produk Pabrikan:

IPW65R110CFDFKSA2

Product Overview

Produsen:

Infineon Technologies

DiGi Electronics Nomor Bagian:

IPW65R110CFDFKSA2-DG

Deskripsi:

MOSFET N-CH 650V 31.2A TO247-3
Deskripsi Detail:
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-41

Inventaris:

208 Pcs Baru Asli Tersedia
12804537
Minta Penawaran
Kuantitas
Minimum 1
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IPW65R110CFDFKSA2 Spesifikasi Teknis

Kategori
FET, MOSFET, FET Tunggal, MOSFET
Produsen
Infineon Technologies
Pengemasan
Tube
Seri
CoolMOS™ CFD2
Status Produk
Active
Jenis FET
N-Channel
Teknologi
MOSFET (Metal Oxide)
Tiriskan ke Sumber Voltage (Vdss)
650 V
Arus - Saluran Terus Menerus (Id) @ 25°C
31.2A (Tc)
Tegangan Drive (Rds Maks Aktif, Rds Min Aktif)
10V
Rds On (Maks) @ Id, Vgs
110mOhm @ 12.7A, 10V
Vgs(th) (Maks) @ Id
4.5V @ 1.3mA
Biaya Gerbang (Qg) (Maks) @ Vgs
118 nC @ 10 V
Vgs (Maks)
±20V
Kapasitansi Input (Ciss) (Maks) @ Vds
3240 pF @ 100 V
Fitur FET
-
Disipasi Daya (Maks)
277.8W (Tc)
Suhu Operasional
-55°C ~ 150°C (TJ)
Jenis Pemasangan
Through Hole
Paket Perangkat Pemasok
PG-TO247-3-41
Paket / Kasus
TO-247-3
Nomor Produk Dasar
IPW65R110

Lembar Data & Dokumen

Lembar data
IPx65R110CFD
Lembar Data HTML
IPW65R110CFDFKSA2-DG
Lembaran Data
IPW65R110CFDFKSA2

Informasi Tambahan

Paket Standar
30
Nama lain
448-IPW65R110CFDFKSA2
SP001987370
IPW65R110CFDFKSA2-DG

Klasifikasi Lingkungan & Ekspor

RoHS Status
ROHS3 Compliant
Tingkat Sensitivitas Kelembaban (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Sertifikasi DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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