NVH4L020N120SC1
Nomor Produk Pabrikan:

NVH4L020N120SC1

Product Overview

Produsen:

onsemi

DiGi Electronics Nomor Bagian:

NVH4L020N120SC1-DG

Deskripsi:

SICFET N-CH 1200V 102A TO247
Deskripsi Detail:
N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L

Inventaris:

862 Pcs Baru Asli Tersedia
12938864
Minta Penawaran
Kuantitas
Minimum 1
num_del num_add
*
*
*
*
(*) wajib
Kami akan menghubungi Anda dalam waktu 24 jam
KIRIM

NVH4L020N120SC1 Spesifikasi Teknis

Kategori
FET, MOSFET, FET Tunggal, MOSFET
Produsen
onsemi
Pengemasan
Tube
Seri
-
Status Produk
Active
Jenis FET
N-Channel
Teknologi
SiCFET (Silicon Carbide)
Tiriskan ke Sumber Voltage (Vdss)
1200 V
Arus - Saluran Terus Menerus (Id) @ 25°C
102A (Tc)
Tegangan Drive (Rds Maks Aktif, Rds Min Aktif)
20V
Rds On (Maks) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Maks) @ Id
4.3V @ 20mA
Biaya Gerbang (Qg) (Maks) @ Vgs
220 nC @ 20 V
Vgs (Maks)
+25V, -15V
Kapasitansi Input (Ciss) (Maks) @ Vds
2943 pF @ 800 V
Fitur FET
-
Disipasi Daya (Maks)
510W (Tc)
Suhu Operasional
-55°C ~ 175°C (TJ)
Derajat
Automotive
Kualifikasi
AEC-Q101
Jenis Pemasangan
Through Hole
Paket Perangkat Pemasok
TO-247-4L
Paket / Kasus
TO-247-4
Nomor Produk Dasar
NVH4L020

Lembar Data & Dokumen

Lembar data
NVH4L020N120SC1
Lembar Data HTML
NVH4L020N120SC1-DG
Lembaran Data
NVH4L020N120SC1

Informasi Tambahan

Paket Standar
30
Nama lain
488-NVH4L020N120SC1

Klasifikasi Lingkungan & Ekspor

RoHS Status
ROHS3 Compliant
Tingkat Sensitivitas Kelembaban (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Sertifikasi DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Produk Terkait
onsemi

NTF2955PT1G

MOSFET P-CH 60V 1.7A SOT-223

onsemi

NVMFS5C466NLWFT1G

MOSFET N-CH 40V 16A/52A 5DFN

onsemi

NVMTS1D2N08H

MOSFET N-CH 80V 43.5A/337A 8DFNW

vishay-siliconix

IRF630PBF

MOSFET N-CH 200V 9A TO220AB