RN1910FE,LF(CT
Nomor Produk Pabrikan:

RN1910FE,LF(CT

Product Overview

Produsen:

Toshiba Semiconductor and Storage

DiGi Electronics Nomor Bagian:

RN1910FE,LF(CT-DG

Deskripsi:

TRANS 2NPN PREBIAS 0.1W ES6
Deskripsi Detail:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Inventaris:

4750 Pcs Baru Asli Tersedia
12889497
Minta Penawaran
Kuantitas
Minimum 1
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RN1910FE,LF(CT Spesifikasi Teknis

Kategori
Bipolar (BJT), Array Transistor Bipolar, Pre-Biased
Produsen
Toshiba Electronic Devices and Storage Corporation
Pengemasan
Tape & Reel (TR)
Seri
-
Status Produk
Active
Jenis Transistor
2 NPN - Pre-Biased (Dual)
Arus - Kolektor (Ic) (Maks)
100mA
Tegangan - Kerusakan Emitter Kolektor (Maks)
50V
Resistor - Basis (R1)
4.7kOhms
Resistor - Basis Emitor (R2)
-
Penguatan Arus DC (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Saturasi Vce (Maks) @ Ib, Ic
300mV @ 250µA, 5mA
Arus - Cutoff Kolektor (Maks)
100nA (ICBO)
Frekuensi - Transisi
250MHz
Daya - Maks
100mW
Jenis Pemasangan
Surface Mount
Paket / Kasus
SOT-563, SOT-666
Paket Perangkat Pemasok
ES6
Nomor Produk Dasar
RN1910

Lembar Data & Dokumen

Lembar data
RN1910,11FE Datasheet

Informasi Tambahan

Paket Standar
4,000
Nama lain
RN1910FE,LF(CB
RN1910FELF(CTTR
RN1910FELF(CTDKR
RN1910FELF(CTCT

Klasifikasi Lingkungan & Ekspor

RoHS Status
ROHS3 Compliant
Tingkat Sensitivitas Kelembaban (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Sertifikasi DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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