RN2104MFV,L3F
Nomor Produk Pabrikan:

RN2104MFV,L3F

Product Overview

Produsen:

Toshiba Semiconductor and Storage

DiGi Electronics Nomor Bagian:

RN2104MFV,L3F-DG

Deskripsi:

TRANS PREBIAS PNP 50V 0.1A VESM
Deskripsi Detail:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM

Inventaris:

RFQ Online
12890726
Minta Penawaran
Kuantitas
Minimum 1
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RN2104MFV,L3F Spesifikasi Teknis

Kategori
Bipolar (BJT), Transistor Bipolar Pre-Biased Tunggal
Produsen
Toshiba Electronic Devices and Storage Corporation
Pengemasan
-
Seri
-
Status Produk
Active
Jenis Transistor
PNP - Pre-Biased
Arus - Kolektor (Ic) (Maks)
100 mA
Tegangan - Kerusakan Emitter Kolektor (Maks)
50 V
Resistor - Basis (R1)
47 kOhms
Resistor - Basis Emitor (R2)
47 kOhms
Penguatan Arus DC (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Saturasi Vce (Maks) @ Ib, Ic
300mV @ 500µA, 5mA
Arus - Cutoff Kolektor (Maks)
500nA
Frekuensi - Transisi
250 MHz
Daya - Maks
150 mW
Jenis Pemasangan
Surface Mount
Paket / Kasus
SOT-723
Paket Perangkat Pemasok
VESM
Nomor Produk Dasar
RN2104

Lembar Data & Dokumen

Lembar data
RN2101-06MFV

Informasi Tambahan

Paket Standar
8,000
Nama lain
RN2104MFVL3F

Klasifikasi Lingkungan & Ekspor

RoHS Status
RoHS Compliant
Tingkat Sensitivitas Kelembaban (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Sertifikasi DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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