RN2116MFV,L3F
Nomor Produk Pabrikan:

RN2116MFV,L3F

Product Overview

Produsen:

Toshiba Semiconductor and Storage

DiGi Electronics Nomor Bagian:

RN2116MFV,L3F-DG

Deskripsi:

TRANS PREBIAS PNP 50V 0.1A VESM
Deskripsi Detail:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Inventaris:

15987 Pcs Baru Asli Tersedia
13275900
Minta Penawaran
Kuantitas
Minimum 1
num_del num_add
*
*
*
*
qyC1
(*) wajib
Kami akan menghubungi Anda dalam waktu 24 jam
KIRIM

RN2116MFV,L3F Spesifikasi Teknis

Kategori
Bipolar (BJT), Transistor Bipolar Pre-Biased Tunggal
Produsen
Toshiba Electronic Devices and Storage Corporation
Pengemasan
Tape & Reel (TR)
Seri
-
Status Produk
Active
Jenis Transistor
PNP - Pre-Biased
Arus - Kolektor (Ic) (Maks)
100 mA
Tegangan - Kerusakan Emitter Kolektor (Maks)
50 V
Resistor - Basis (R1)
4.7 kOhms
Resistor - Basis Emitor (R2)
10 kOhms
Penguatan Arus DC (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Saturasi Vce (Maks) @ Ib, Ic
300mV @ 500µA, 5mA
Arus - Cutoff Kolektor (Maks)
500nA
Daya - Maks
150 mW
Jenis Pemasangan
Surface Mount
Paket / Kasus
SOT-723
Paket Perangkat Pemasok
VESM
Nomor Produk Dasar
RN2116

Lembar Data & Dokumen

Informasi Tambahan

Paket Standar
8,000
Nama lain
264-RN2116MFVL3FTR
264-RN2116MFVL3FDKR
RN2116MFV,L3F(B
264-RN2116MFVL3FCT

Klasifikasi Lingkungan & Ekspor

Tingkat Sensitivitas Kelembaban (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Sertifikasi DIGI
Produk Terkait
toshiba-semiconductor-and-storage

RN1101MFV,L3F(CT

TRANS PREBIAS NPN 50V 0.1A VESM

toshiba-semiconductor-and-storage

RN1410,LF

TRANS PREBIAS NPN 50V SMINI

toshiba-semiconductor-and-storage

RN1106MFV,L3F(CT

TRANS PREBIAS NPN 50V 0.1A VESM

toshiba-semiconductor-and-storage

RN2410,LF

TRANS PREBIAS PNP 50V SMINI